1 6.0 0 . 4 10 . 8 0 . 5 1 6.0 0 . 4 10 . 8 0 . 5 |? 1.1 0 .1 20 min 8.0 0 . 4 |? 3 . 84 typ. features rating to 1000v prv surge overload rating to 50 amperes peak ideal for printed circuit board reliable low cost construction utilizing molded plastic technique results in inexpensive product maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. lead solderable per mil-std-202 method 208 silicon bridge rect ifiers voltage range: 50 --- 1000 v current: 3.0 a br3 dimensions in millimeters diode semiconductor korea www.diode.kr notes: 1.measured at 1.0 mhz and applied reverse voltage of 4.0 volts. 2.unit mounted on 4.0 ? x 4.0 ? x0.11 ? thick(10.5x10.5x0.3cm)al.plate. 3.unit mounted on p.c. board with 0.5 ? x 0.5 ? (12x12mm) copper pads,0.375 ? (9.5mm) lead length. ratings at 25 c ambient temperature unless otherwise specified. single phase half-wave 60hz,resistive or inductive load, for current capacitive load derate by 20%. 15 1.0 10 0.5 20 12 -55 to +125 -55 to +150 50 35 50 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 kpbc 1005 3.0 2.0 kpbc 101 kpbc 102 kpbc 106 kpbc 108 kpbc 110 kpbc 104 br305 br34 br31 br32 br36 br38 br310 volts volts volts symbols units amps amps volts v rrm v rms v dc i (av) i fsm maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward t a =50 c(note 2) output rectified current at t a =25 c(note 3) peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) rating for fusing(t<8.3ms) maximum instantaneous forward voltage drop per birdge element at 1.5a maximum dc reverse current t a =25 c at rated dc blocking voltage t a =100 c typical junction capacitance (note 1) typical thermal resistance (note 2) operating junction temperature range storage temperature range i t c j r q ja t j t stg i r a s 2 2 v f a u c c/w ma c pf 60 kbpc1005 --- kbpc110
single phase half wave 60hz resistive or inductive load 0 2 5 5 0 7 5 1 00 1 25 1 50 1 75 1 2 4 3 0 .4 .6 .8 1.0 1.2 .01 0.1 1.0 0.2 10 1.4 t j =25 pulse width =300us 10 04060 20 t j =100 100 120 140 80 t j =25 0.1 1.0 .01 0 10 1 1 0 0 50 20 30 40 10 8.3ms single half sine wave t j =125 amperes average forward output current , amperes fi g. 3 -- typical forward characteri sti c fi g. 4 -- typi cal reverse characteristi c instantaneous forward voltage, volts kbpc1005 - - - kbpc110 number of cycles at 60h z ambient temperature, instantaneous forward current, peak forward surge current, fi g. 2 -- forward derati ng curve amperes micro amperes percent of rated peak reverse voltage fi g. 1 -- peak forward surge current instantaneous reverse current, www.diode.kr diode semiconductor korea
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